• DocumentCode
    2308453
  • Title

    The effects of low-energy proton irradiation on partially shielded GaAs solar cells

  • Author

    Scott, David M. ; Marvin, Dean C.

  • Author_Institution
    Aerosp. Corp., Los Angeles, CA, USA
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    1338
  • Lastpage
    1342
  • Abstract
    The effects of low-energy proton radiation incident on a small strip at the edge of GaAs space power solar cells has been measured. Three separate parameters have been studied; the proton energy, total proton fluence, and the fraction of the strip irradiated. Finally, the response of cells irradiated with a spectrum of protons representative of the geosynchronous space environment has also been measured. The proton irradiation, whether mono-energetic or a spectrum, initially degrades the cells. As irradiation continues, the degradation slows, ceases and reverses. At high doses, nearly all of the induced degradation is removed and the cell becomes impervious to further irradiation. The variation of power loss versus fraction of the strip region exposed is nonlinear, with 60% of the total degradation occurring after exposing only 25% of the edge. The effects may be minimized by either pre-irradiation of the strip region or partial shielding. Protection may not be required for some radiation environments or missions
  • Keywords
    III-V semiconductors; gallium arsenide; photovoltaic power systems; proton effects; semiconductor device testing; solar cells; space vehicle power plants; GaAs; degradation; geosynchronous space environment; low-energy proton irradiation; missions; partial shielding; power loss; pre-irradiation; protection; proton energy; response; semiconductor; space power solar cells; strip irradiation fraction; total proton fluence; Degradation; Extraterrestrial measurements; Gallium arsenide; Manufacturing; Photovoltaic cells; Production; Protection; Protons; Satellites; Strips;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.346924
  • Filename
    346924