Title :
Design and characterization of MMIC active cold loads
Author :
Buhles, P.M. ; Lardizabal, S.M.
Author_Institution :
Dept. of Electr. Eng., Massachusetts Univ., Amherst, MA, USA
Abstract :
This paper reports the first broadband monolithic microwave integrated circuit (MMIC) active cold loads. The fabricated loads demonstrate state-of-the-art temperatures of 90 K over the 2-10 GHz range and 125 K over the 10-26 GHz range. The MMICs were fabricated on 100 micron GaAs substrates using 0.15 micron GaAs Metamorphic HEMT technology. In addition, contemporary topologies for cold load design have been evaluated.
Keywords :
HEMT integrated circuits; III-V semiconductors; cryogenic electronics; field effect MMIC; gallium arsenide; integrated circuit design; 0.15 micron; 125 K; 2 to 26 GHz; 90 K; GaAs; GaAs MHEMT; GaAs metamorphic HEMT technology; GaAs substrates; MMIC active cold loads; broadband type; characterization; cold load design; contemporary topologies; monolithic microwave integrated circuit; Calibration; Circuit topology; Costs; Feedback; Gallium arsenide; HEMTs; MMICs; Microwave radiometry; Temperature distribution; mHEMTs;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860878
