Title :
A power combined W-band HBT oscillator
Author :
Uchida, K. ; Matsuura, H. ; Yakihara, T. ; Kobayashi, S. ; Oka, S. ; Fujita, T. ; Miura, A.
Author_Institution :
Teratec Corp., Tokyo, Japan
Abstract :
In this paper, the development of a power combined W-band heterojunction bipolar transistor (HBT) oscillator is reported. The oscillation frequency is 105.9 GHz, and the output power is +0.6 dBm with a phase noise of -88 dBc/Hz at 1 MHz offset. We believe this is the first report of a W-band fundamental mode power combined oscillator.
Keywords :
bipolar MIMIC; heterojunction bipolar transistors; integrated circuit noise; millimetre wave oscillators; phase noise; 105.9 GHz; W-band oscillator; fundamental mode power combined oscillator; heterojunction bipolar transistor; phase noise; power combined HBT oscillator; Cutoff frequency; Displays; HEMTs; Heterojunction bipolar transistors; Phase noise; Power amplifiers; Power generation; Power transmission lines; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860883
