Title :
Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode
Author :
Hayashino, Kouhei ; Harauchi, Kenji ; Iwasaki, Yuichi ; Fukui, Kazuhito ; Ao, Jin-Ping ; Ohno, Yasuo
Author_Institution :
Inst. of Technol. & Sci., Univ. of Tokushima, Tokushima, Japan
Abstract :
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; circuit simulation; gallium compounds; losses; rectennas; wide band gap semiconductors; DC output power estimation; GaN; Schottky barrier diode; circuit simulation; diode capacitance; loss mechanism analysis; signal frequency effect; single shunt rectenna circuits; Analytical models; Capacitance; Fingers; Integrated circuit modeling; Rectennas; Resistance; Schottky diodes; GaN; loss; rectenna; schottky barrier diode; simulation; single shunt;
Conference_Titel :
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1777-1
DOI :
10.1109/IMWS.2012.6215780
