DocumentCode
2309283
Title
Fault models and test methods for subthreshold SRAMs
Author
Lin, Chen-Wei ; Chen, Hung-Hsin ; Yang, Hao-Yu ; Chao, Mango C -T ; Huang, Rei-Fu
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2010
fDate
2-4 Nov. 2010
Firstpage
1
Lastpage
10
Abstract
Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold-SRAM design. However, the test methods regarding those newly developed subthreshold-SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold-SRAM designs into three types, study the faulty behavior of different open defects for each type of designs, and then identify the faults which may or may not be covered by a traditional SRAM test method. For those hard-to-detect faults, we will further discuss the corresponding test method according to different each type of subthreshold-SRAM designs. At last, a discussion about the temperature at test will also be provided.
Keywords
SRAM chips; fault tolerance; fault model; hard-to-detect faults; open defects; subthreshold SRAM design; temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference (ITC), 2010 IEEE International
Conference_Location
Austin, TX
ISSN
1089-3539
Print_ISBN
978-1-4244-7206-2
Type
conf
DOI
10.1109/TEST.2010.5699245
Filename
5699245
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