• DocumentCode
    2309283
  • Title

    Fault models and test methods for subthreshold SRAMs

  • Author

    Lin, Chen-Wei ; Chen, Hung-Hsin ; Yang, Hao-Yu ; Chao, Mango C -T ; Huang, Rei-Fu

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    2-4 Nov. 2010
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold-SRAM design. However, the test methods regarding those newly developed subthreshold-SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold-SRAM designs into three types, study the faulty behavior of different open defects for each type of designs, and then identify the faults which may or may not be covered by a traditional SRAM test method. For those hard-to-detect faults, we will further discuss the corresponding test method according to different each type of subthreshold-SRAM designs. At last, a discussion about the temperature at test will also be provided.
  • Keywords
    SRAM chips; fault tolerance; fault model; hard-to-detect faults; open defects; subthreshold SRAM design; temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference (ITC), 2010 IEEE International
  • Conference_Location
    Austin, TX
  • ISSN
    1089-3539
  • Print_ISBN
    978-1-4244-7206-2
  • Type

    conf

  • DOI
    10.1109/TEST.2010.5699245
  • Filename
    5699245