Characterization of Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar Orbiter

For the Extreme Ultraviolet Imager (EUI) of the Solar Orbiter mission, to be launched in 2017, CMOS active pixel sensor (APS) prototypes have been developed with several test pixel designs. A set of measurements was carried out to evaluate their performance characteristics in visible and in extreme ultraviolet wavelengths. We present the results of measurement campaigns that lead to the selection of a preferred pixel design in regard to the scientific performance requirements of the EUI flight model detectors, i.e., back-thinned CMOS APS devices of 2048 $,\times,$ 2048 and 3072 $,\times,$ 3072 pixel formats with a 10- $\mu{\rm m}$ pixel pitch.