• DocumentCode
    2309350
  • Title

    Deposition of high quality a-(Si,Ge):H films and novel graded gap devices using RF triode glow discharge deposition

  • Author

    Baldwin, Greg ; Dalal, Vikram ; Han, Kay

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    1037
  • Lastpage
    1042
  • Abstract
    The authors report on the deposition of high quality, reproducible a-(Si,Ge):H films and solar cell devices using a low-pressure RF triode glow discharge. They also report on the fabrication of devices in these materials using a novel bandgap grading scheme. The devices were fabricated on tin oxide substrates and required the development of an appropriate new buffer layer
  • Keywords
    Ge-Si alloys; amorphous semiconductors; elemental semiconductors; energy gap; germanium; hydrogen; plasma deposited coatings; plasma deposition; semiconductor doping; semiconductor thin films; silicon; solar cells; Ge:H; RF triode glow discharge deposition; Si:H; SiGe:H; SnO; a-(Si,Ge):H films; bandgap grading; buffer layer; development; fabrication; graded gap devices; solar cell; substrates; Absorption; Conductivity; Optical films; Optical scattering; Photonic band gap; Plasma displays; Plasma measurements; Radio frequency; Substrates; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.346982
  • Filename
    346982