DocumentCode
2309350
Title
Deposition of high quality a-(Si,Ge):H films and novel graded gap devices using RF triode glow discharge deposition
Author
Baldwin, Greg ; Dalal, Vikram ; Han, Kay
Author_Institution
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fYear
1993
fDate
10-14 May 1993
Firstpage
1037
Lastpage
1042
Abstract
The authors report on the deposition of high quality, reproducible a-(Si,Ge):H films and solar cell devices using a low-pressure RF triode glow discharge. They also report on the fabrication of devices in these materials using a novel bandgap grading scheme. The devices were fabricated on tin oxide substrates and required the development of an appropriate new buffer layer
Keywords
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; energy gap; germanium; hydrogen; plasma deposited coatings; plasma deposition; semiconductor doping; semiconductor thin films; silicon; solar cells; Ge:H; RF triode glow discharge deposition; Si:H; SiGe:H; SnO; a-(Si,Ge):H films; bandgap grading; buffer layer; development; fabrication; graded gap devices; solar cell; substrates; Absorption; Conductivity; Optical films; Optical scattering; Photonic band gap; Plasma displays; Plasma measurements; Radio frequency; Substrates; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.346982
Filename
346982
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