• DocumentCode
    2309372
  • Title

    Comparison of FFT/IFFT Designs Utilizing Different Low Power Techniques

  • Author

    Kwen-Siong Chong ; Chang, Joseph S. ; Ebong, I. ; Yilmaz, Yasin ; Mazumder, Prasenjit

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2012
  • fDate
    19-22 Dec. 2012
  • Firstpage
    116
  • Lastpage
    119
  • Abstract
    Different techniques of power savings in CMOS circuits have been investigated through the years. This work compares the asynchronous approach, the superthreshold approach, and the subthreshold approach in a 128 point FFT processor. The subthreshold design, made in TSMC 65 nm technology, utilizes a 4 kb SRAM with 8T unit cells. The sizing requirements for the 8T cell operated in subthreshold regime is explored as a function of static write margin. The subthreshold processor runs at 1 MHz with an energy consumption of 31 nJ/FFT. Subthreshold approach is seen to be the most energy efficient low power method of the three approaches.
  • Keywords
    CMOS integrated circuits; SRAM chips; energy consumption; fast Fourier transforms; low-power electronics; power integrated circuits; CMOS circuits; FFT/IFFT designs; SRAM; TSMC; energy consumption; low power techniques; power savings; FFT; SRAM; asynchronous; subthreshold;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic System Design (ISED), 2012 International Symposium on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4673-4704-4
  • Type

    conf

  • DOI
    10.1109/ISED.2012.57
  • Filename
    6526565