DocumentCode
2309372
Title
Comparison of FFT/IFFT Designs Utilizing Different Low Power Techniques
Author
Kwen-Siong Chong ; Chang, Joseph S. ; Ebong, I. ; Yilmaz, Yasin ; Mazumder, Prasenjit
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2012
fDate
19-22 Dec. 2012
Firstpage
116
Lastpage
119
Abstract
Different techniques of power savings in CMOS circuits have been investigated through the years. This work compares the asynchronous approach, the superthreshold approach, and the subthreshold approach in a 128 point FFT processor. The subthreshold design, made in TSMC 65 nm technology, utilizes a 4 kb SRAM with 8T unit cells. The sizing requirements for the 8T cell operated in subthreshold regime is explored as a function of static write margin. The subthreshold processor runs at 1 MHz with an energy consumption of 31 nJ/FFT. Subthreshold approach is seen to be the most energy efficient low power method of the three approaches.
Keywords
CMOS integrated circuits; SRAM chips; energy consumption; fast Fourier transforms; low-power electronics; power integrated circuits; CMOS circuits; FFT/IFFT designs; SRAM; TSMC; energy consumption; low power techniques; power savings; FFT; SRAM; asynchronous; subthreshold;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System Design (ISED), 2012 International Symposium on
Conference_Location
Kolkata
Print_ISBN
978-1-4673-4704-4
Type
conf
DOI
10.1109/ISED.2012.57
Filename
6526565
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