Title :
A compact and wideband GaAs P-HEMT distributed amplifier IC based on a micro-machined CPW
Author :
Sung-Gi Yang ; Kwang-Seok Seo
Author_Institution :
Syst. LSI, Samsung Electron. Corp., South Korea
Abstract :
This paper presents a new GaAs P-HEMT distributed amplifier IC that employs a micro-machined, grooved-CPW. By removing the substrate between the signal and ground metal, the grooved-CPW has small effective dielectric constant (/spl epsi//sub r,eff/) and becomes a highly inductive line. When the grooved-CPW is used in the distributed amplifier, the f/sub 3dB/ and the chip size have been improved by about 20%. The fabricated GaAs P-HEMT distributed amplifier IC has a gain of 10 dB with f/sub 3dB/>50 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguide components; distributed amplifiers; gallium arsenide; micromachining; wideband amplifiers; 10 dB; 50 GHz; GaAs; compact wideband GaAs P-HEMT distributed amplifier IC; effective dielectric constant; inductive line; micromachined grooved CPW; Bandwidth; Capacitance; Coplanar transmission lines; Coplanar waveguides; Dielectric constant; Dielectric substrates; Distributed amplifiers; Distributed parameter circuits; Dry etching; Gallium arsenide;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860947
