DocumentCode
2309442
Title
Factors affecting the open circuit voltage in amorphous silicon solar cells
Author
Kim, J.C. ; Schwartz, R.J. ; Gray, J.L.
Author_Institution
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
1993
fDate
10-14 May 1993
Firstpage
1001
Lastpage
1004
Abstract
The authors examine, by means of numerical modeling, the factors which determine and limit the open circuit voltage of a-Si p-i-n solar cells. It is found that a good front contact which blocks minority carriers enhances the open circuit voltage when the acceptor doping in the emitter is low. However, these effects do not lead to as much improvement of the solar cell conversion efficiency as might be expected because of a decrease in the fill factor which accompanies the increase in Voc. The authors also show that tail state recombination is an important parameter which limits Voc
Keywords
amorphous semiconductors; electrical contacts; electron-hole recombination; elemental semiconductors; minority carriers; numerical analysis; semiconductor device models; semiconductor doping; silicon; solar cells; Si; a-Si p-i-n solar cells; acceptor doping; conversion efficiency; emitter; fill factor; front contact; minority carrier blocking; numerical modeling; open-circuit voltage; tail state recombination; Amorphous silicon; Circuit simulation; Contacts; Doping; Numerical models; Photonic band gap; Photovoltaic cells; Semiconductor process modeling; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.346989
Filename
346989
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