DocumentCode :
2309442
Title :
Factors affecting the open circuit voltage in amorphous silicon solar cells
Author :
Kim, J.C. ; Schwartz, R.J. ; Gray, J.L.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
1001
Lastpage :
1004
Abstract :
The authors examine, by means of numerical modeling, the factors which determine and limit the open circuit voltage of a-Si p-i-n solar cells. It is found that a good front contact which blocks minority carriers enhances the open circuit voltage when the acceptor doping in the emitter is low. However, these effects do not lead to as much improvement of the solar cell conversion efficiency as might be expected because of a decrease in the fill factor which accompanies the increase in Voc. The authors also show that tail state recombination is an important parameter which limits Voc
Keywords :
amorphous semiconductors; electrical contacts; electron-hole recombination; elemental semiconductors; minority carriers; numerical analysis; semiconductor device models; semiconductor doping; silicon; solar cells; Si; a-Si p-i-n solar cells; acceptor doping; conversion efficiency; emitter; fill factor; front contact; minority carrier blocking; numerical modeling; open-circuit voltage; tail state recombination; Amorphous silicon; Circuit simulation; Contacts; Doping; Numerical models; Photonic band gap; Photovoltaic cells; Semiconductor process modeling; Tail; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.346989
Filename :
346989
Link To Document :
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