• DocumentCode
    2309442
  • Title

    Factors affecting the open circuit voltage in amorphous silicon solar cells

  • Author

    Kim, J.C. ; Schwartz, R.J. ; Gray, J.L.

  • Author_Institution
    Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    1001
  • Lastpage
    1004
  • Abstract
    The authors examine, by means of numerical modeling, the factors which determine and limit the open circuit voltage of a-Si p-i-n solar cells. It is found that a good front contact which blocks minority carriers enhances the open circuit voltage when the acceptor doping in the emitter is low. However, these effects do not lead to as much improvement of the solar cell conversion efficiency as might be expected because of a decrease in the fill factor which accompanies the increase in Voc. The authors also show that tail state recombination is an important parameter which limits Voc
  • Keywords
    amorphous semiconductors; electrical contacts; electron-hole recombination; elemental semiconductors; minority carriers; numerical analysis; semiconductor device models; semiconductor doping; silicon; solar cells; Si; a-Si p-i-n solar cells; acceptor doping; conversion efficiency; emitter; fill factor; front contact; minority carrier blocking; numerical modeling; open-circuit voltage; tail state recombination; Amorphous silicon; Circuit simulation; Contacts; Doping; Numerical models; Photonic band gap; Photovoltaic cells; Semiconductor process modeling; Tail; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.346989
  • Filename
    346989