Title :
Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs
Author :
Horio, K. ; Usami, K. ; Satoh, K.
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
Abstract :
Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; impact ionisation; semiconductor device models; semiconductor device reliability; GaAs; GaAs MESFETs; backgating effect; hole accumulation; hole impact ionization; hole trapping; kink phenomena; performance instabilities; physical mechanism; self-consistent 2D simulation; Charge carrier processes; Electric breakdown; Electron emission; Gallium arsenide; Impact ionization; Insulation; MESFETs; Modeling; Poisson equations; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513681
