DocumentCode
2309552
Title
Leveraging existing power control circuits and power delivery architecture for variability measurement
Author
Acharyya, Dhruva ; Agarwal, Kanak ; Plusquellic, Jim
Author_Institution
Verigy Ltd., Singapore, Singapore
fYear
2010
fDate
2-4 Nov. 2010
Firstpage
1
Lastpage
9
Abstract
Embedded test structures are increasingly being used to measure and analyze performance and power variations in product chips to better understand the impact of process variations. In this work, we propose a minimally-invasive, low-overhead technique for characterizing within-die and die-to-die leakage variation. The proposed technique leverages existing power control circuitry added by designers to reduce the power consumption of inactive functional units. We manipulate these `sleep islands´ to isolate and measure their leakage current contribution to the chip-wide leakage current. The measured set of sleep island leakage currents reflect the leakage current variation across the chip at a coarse level of resolution. In order to improve resolution, we propose a multiple power supply port (MSP) measurement technique to provide `within-island´ leakage current measurements. A calibration technique is described that corrects for differences between the sleep island and MSP approaches, effectively enabling the same information to be obtained using either technique. We demonstrate the techniques on a set of test chips fabricated in 65-nm SOI technology. The results show that leakage current variations across a small test structure array have both a locally random and globally deterministic component that can be accurately mapped using the sleep island or MSP approaches.
Keywords
integrated circuit measurement; integrated circuit testing; leakage currents; power integrated circuits; silicon-on-insulator; SOI technology; calibration technique; chip-wide leakage current; die-to-die leakage variation; embedded test structure; leakage current variation; multiple power supply port measurement; power consumption; power control circuit; power delivery architecture; power variation; process variation; product chip; size 65 nm; sleep island leakage current; variability measurement; within-die leakage variation; within-island leakage current measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference (ITC), 2010 IEEE International
Conference_Location
Austin, TX
ISSN
1089-3539
Print_ISBN
978-1-4244-7206-2
Type
conf
DOI
10.1109/TEST.2010.5699268
Filename
5699268
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