Concentrator module based on LPE-grown GaAs solar cells

Author

Blieske, U. ; Baldus, A. ; Bett, A. ; Lutz, F. ; Nguyen, T. ; Schetter, Ch ; Schitterer, K. ; Sulima, O.V. ; Wettling, W.

Author_Institution

Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany

fYear

1993

fDate

10-14 May 1993

Firstpage

735

Lastpage

740

Abstract

The design of a 62.6 cm² concentrator test module and the results of its outdoor measurements are presented. The module is based on p-AlGaAs/p-GaAs/n-GaAs(substrate) solar cells grown by the LPE etchback-regrowth method. A new concentrator grid design with only 3.3% shadowing is applied to these solar cells. The module efficiency of 19.1% has been obtained under 851 W/m² direct normal insolation without active cooling and without secondary lenses

Keywords

III-V semiconductors; aluminium alloys; design engineering; etching; gallium arsenide; liquid phase epitaxial growth; semiconductor device models; semiconductor device testing; solar cells; solar energy concentrators; 19.1 percent; AlGaAs-GaAs-GaAs; LPE etchback-regrowth method; concentrator grid design; direct normal insolation; outdoor measurements; p-AlGaAs/p-GaAs/n-GaAs; semiconductor; shadowing; solar cells; test module; Boats; Epitaxial growth; Etching; Gallium arsenide; Photovoltaic cells; Shadow mapping; Stability; Substrates; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.346999

Filename

346999