Title :
Contact processing methods for production III-V solar cells
Author :
Chu, C. ; Lles, P.A.
Author_Institution :
Appl. Solar Energy Corp., City of Industry, CA, USA
Abstract :
Several different metal combinations and deposition schemes have been developed to produce III-V solar cells with good performance. As the production level increases, the contact methods must be continually assessed, to cope with production and user demands. A variety of contact methods have worked well with current GaAs cells, and can be adapted for advanced III-V cells as they move into production
Keywords :
III-V semiconductors; electrical contacts; gallium arsenide; semiconductor thin films; solar cells; GaAs; III-V solar cells; contact processing methods; deposition schemes; metal combinations; performance; production; semiconductor; Bonding; Contact resistance; Costs; Gallium arsenide; III-V semiconductor materials; MOCVD; Photovoltaic cells; Production; Reflectivity; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347000
