Title :
Efficient GaAs tunnel diode as an inter-cell ohmic contact in the tandem AlxGa1-xAs/GaAs
Author :
Zahraman, K. ; Taylor, S.J. ; Beaumont, B. ; Grenet, J.C. ; Gibart, P. ; Vèrié, C.
Author_Institution :
Lab. de Phys. du Solide et Energie Solaire, CNRS, Valbonne, France
Abstract :
The authors report the growth of GaAs tunnel diodes by atmospheric pressure OMVPE, using diethyl tellurium and carbon tetrachloride as n and p-type dopants respectively, for use as the inter-cell ohmic contact in the monolithic tandem AlxGa1-xAs/GaAs. After annealing under conditions which simulate the growth of the complete tandem structure, the diodes retained a peak current of typically 15.4 A/cm2 at 120°C, which should enable satisfactory operation of this system for space applications under a concentration of up to 500 suns
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; ohmic contacts; semiconductor growth; solar cells; tunnel diodes; vapour phase epitaxial growth; 500 suns concentration; AlGaAs-GaAs; GaAs tunnel diode; annealing; atmospheric pressure OMVPE; carbon tetrachloride; diethyl tellurium; dopants; inter-cell ohmic contact; peak current; space applications; tandem AlxGa1-xAs/GaAs solar cell; Computer aided analysis; Diodes; Epitaxial growth; Gallium arsenide; Ohmic contacts; Photonic band gap; Photovoltaic cells; Simulated annealing; Substrates; Tellurium;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347004
