DocumentCode
2309799
Title
Difficulties encountered in developing numerical InP solar cell models
Author
Durbin, S.M. ; Gray, J.L.
Author_Institution
Dept. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
1993
fDate
10-14 May 1993
Firstpage
665
Lastpage
669
Abstract
A number of different InP solar cell models have appeared in the literature, with the ultimate goals of identifying loss mechanisms and designing an optimal cell. Approaches have ranged from traditional analytical models to commercially-available finite element device simulation packages. However, values other than those obtained experimentally for material parameters are often employed in order to fit experimental cell parameters. Effects such as bandgap narrowing, surface recombination, photon recycling and two-dimensional current flow can significantly alter performance predictions, and care must be taken to ensure that they are properly accounted for. This paper describes modeling efforts of InP solar cells using ADEPT, a multidimensional complete numerical simulation package developed at Purdue University
Keywords
II-VI semiconductors; digital simulation; energy gap; indium compounds; power engineering computing; semiconductor device models; software packages; solar cells; ADEPT; InP; Purdue University; bandgap narrowing; finite element device simulation packages; loss mechanisms; numerical InP solar cell models; photon recycling; surface recombination; two-dimensional current flow; Analytical models; Finite element methods; Indium phosphide; Multidimensional systems; Packaging; Photonic band gap; Photovoltaic cells; Recycling; Spontaneous emission; Surface fitting;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347013
Filename
347013
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