Title :
Reaction chemistry of CuInSe2 formation by selenization using elemental Se
Author :
Yamanaka, Satoshi ; McCandless, Brian E. ; Birkmire, Robert W.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Selenization of Cu-In layers with elemental Se at temperatures of 150°C to 650°C was performed to evaluate the reaction chemistry leading to the formation of CuInSe2 films for solar cells. Chemical reaction pathways for Cu-In precursors to form single phase CuInSe2 were deduced from the detailed analysis of intermediate phases by X-ray diffractometry and a phenomenological reaction model is proposed. Based on this model, high temperature selenization with no loss of In was demonstrated indicating the importance of thermal history during the selenization processes
Keywords :
X-ray diffraction examination of materials; chemical reactions; copper compounds; indium compounds; materials preparation; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; 150 to 650 C; CuInSe2; CuInSe2 formation; Se; X-ray diffractometry; chemical reaction pathways; elemental Se; phenomenological reaction model; reaction chemistry; selenization; solar cells; thermal history; Chemical analysis; Chemical elements; Chemistry; Energy conversion; Glass; Scanning electron microscopy; Substrates; Temperature; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347024
