Numerical modeling of polycrystalline CdTe and CIS solar cells

Author

Lee, Youn-Jung ; Gray, Jeffery L.

Author_Institution

Dept. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

586

Lastpage

591

Abstract

Polycrystalline CdTe and CuInSe₂ are excellent candidates for stable, efficient and low cost solar cells. Numerical modeling can aid the analysis of device operation and can be used as a design aid. A ZnO/thin-CdS/CuInSe₂ solar cell is modeled using ADEPT and the effect of the property of the Cu-poor layer near the CdS interface on cell performance is examined. The effect of a nonideal back contact, as well as the influence of the grain properties of a CdS/CdTe solar cell is investigated using one and two dimensional device simulation

Keywords

II-VI semiconductors; cadmium compounds; copper compounds; digital simulation; electronic engineering computing; indium compounds; power engineering computing; semiconductor device models; software packages; solar cells; ternary semiconductors; zinc compounds; 1D; 2D; ADEPT; CdTe-CdS; CuInSe₂-CdS-ZnO; computer simulation; design aid; device operation; device simulation; grain properties; interface; nonideal back contact; numerical modeling; performance; polycrystalline semiconductors; solar cells; Computational Intelligence Society; Costs; Crystalline materials; Numerical models; Numerical simulation; Photovoltaic cells; Semiconductor process modeling; Short circuit currents; Voltage; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347028

Filename

347028