DocumentCode :
2310300
Title :
Multicrystalline silicon solar cells processed by rapid thermal processing
Author :
Hartiti, B. ; Slaoui, A. ; Muller, J.C. ; Siffert, P. ; Schindler, R. ; Reis, I. ; Wagner, B. ; Eyer, A.
Author_Institution :
Lab. PHASE, Centre de Recherches Nucl., Strasbourg, France
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
224
Lastpage :
229
Abstract :
In the present work, the authors show that rapid thermal processing (RTP) in a lamp furnace can be successfully used for the manufacturing of multicrystalline silicon solar cells. RTP is carried out on various multicrystalline wafers coated with phosphorus doped silica- films on the front side and pure aluminium on the rear side. Phosphorus concentration profiles and electrical activation were investigated by secondary ion mass spectrometry (SIMS) and sheet resistance measurements, respectively. The influence of RTP on the bulk properties of the multicrystalline wafers were monitored by using the surface photovoltage technique. Finally, 2×2 cm2 test solar cells have been fabricated and characterized by employing dark and illuminated I-V analysis as well as spectral response measurements. The efficiency of the best AR coated cell has been 14.1 % with an open-circuit voltage of 595 mV and a short circuit current of 31.7 mA/cm 2
Keywords :
elemental semiconductors; rapid thermal processing; semiconductor device testing; semiconductor doping; silicon; solar cells; 14.1 percent; 2 cm; 595 mV; AR coating; I-V analysis; Si; bulk properties; electrical activation; multicrystalline semiconductor; open-circuit voltage; rapid thermal processing; secondary ion mass spectrometry; sheet resistance measurements; short circuit current; solar cells; spectral response measurements; surface photovoltage technique; wafers; Aluminum; Electrical resistance measurement; Furnaces; Lamps; Manufacturing processes; Mass spectroscopy; Monitoring; Photovoltaic cells; Rapid thermal processing; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347048
Filename :
347048
Link To Document :
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