The effect of dislocations on the performance of silicon solar cells

Author

Pauls, K.L. ; Mitchell, K.W. ; Chesarek, W.

Author_Institution

Siemens Solar Ind., Camarillo, CA, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

209

Lastpage

213

Abstract

The existence of slip dislocated material in Czochralski silicon ingots and the effects of the dislocations on solar cell performance have previously been identified. In this paper, cell performance as a function of dislocation density and the distribution of dislocations across a wafer has been characterized in order to quantify the performance losses associated with dislocated material. In addition, improvements in wafer and cell processing have decreased the impact that dislocated materials have on solar cell performance

Keywords

crystal growth from melt; dislocation density; dislocations; elemental semiconductors; losses; semiconductor device testing; semiconductor growth; silicon; solar cells; Czochralski silicon ingots; Si; cell processing; dislocation density; dislocation distribution; losses; performance; semiconductor; slip dislocated material; solar cells; wafer processing; Costs; Crystalline materials; Crystallization; Etching; Performance loss; Photovoltaic cells; Sawing machines; Silicon; Tail; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347051

Filename

347051