Title :
Simplified processing for 23%-efficient silicon concentrator solar cells
Author :
Ruby, D.S. ; Basore, P.A. ; Buck, M.E. ; Gee, J.M. ; Schubert, W.K. ; Tardy, H.L.
Author_Institution :
Photovoltaic Technol. Res. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The authors have developed a three-photomask process that requires only a single furnace step above 800°C to fabricate silicon concentrator cells with efficiencies approaching 23% on float-zone (FZ) Si and, for the first time, an efficiency of 20% on solar-grade Czochralski (Cz) Si. Until now, high-efficiency silicon concentrator cells that have demonstrated conversion efficiencies greater than 22% have used FZ silicon and required multiple dopant diffusions and several high-temperature furnace steps. These complexities increase processing costs and preclude the use of lower cost CZ silicon, which is easily degraded by repeated high-temperature cycling. This simplified processing schedule retains most of the benefit available from high-performance solar cell designs while holding down processing costs, and it makes the use of lower cost CZ Si a viable option. The incorporation of a better optimized antireflection coating and a lower recombination back-surface field are projected to increase this performance even further
Keywords :
crystal growth from melt; electron-hole recombination; elemental semiconductors; masks; semiconductor device testing; semiconductor growth; silicon; solar cells; solar energy concentrators; zone melting; 20 percent; 23 percent; Czochralski Si; Si; antireflection coating; concentrator solar cells; design; fabrication; float-zone Si; high-temperature cycling; performance; processing costs; recombination back-surface field; semiconductor; three-photomask process; Aluminum; Coatings; Costs; Degradation; Etching; Furnaces; Photovoltaic cells; Silicon; Sun; Surface resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347058