DocumentCode :
2310697
Title :
Homogeneity analysis of multicrystalline silicon ingots with columnar grain structure
Author :
Schätzle, P. ; Zöllner, Th ; Schindler, R. ; Eyer, A.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
78
Lastpage :
82
Abstract :
The aim of our work is the quality improvement of cast multicrystalline silicon ingots fabricated in a scaled down copy of an industrial production system (ingot size 220×220×180 mm3). Standard ingots show an inhomogeneous grain structure due to a strongly concave solidification interface. In order to improve the quality, the thermal conditions and the mould configuration of the research system were changed in such a way that ingots with a homogeneous columnar grain structure are produced now. Although the overall lateral and vertical homogeneity is excellent, there are still small areas distributed all over the ingot where the electrical quality and particularly the solar cell efficiency are reduced. These areas are found to be correlated with small grain sizes, high defect densities and an increased minority carrier recombination. In spite of these low quality areas test solar cells showed efficiencies over 15% with standard solar cell processes
Keywords :
carrier lifetime; crystal defects; crystal microstructure; elemental semiconductors; grain size; materials preparation; minority carriers; silicon; solar cells; solidification; 15 percent; Si; columnar grain structure; electrical quality; high defect densities; homogeneity analysis; homogeneous columnar grain structure; inhomogeneous grain structure; lateral homogeneity; minority carrier recombination; multicrystalline silicon ingots; solar cell efficiency; strongly concave solidification interface; vertical homogeneity; Chemicals; Grain size; Heat sinks; Large-scale systems; Photovoltaic cells; Production systems; Silicon; Temperature; Testing; Textile industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347076
Filename :
347076
Link To Document :
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