Title :
Stability studies of component cells for multijunction amorphous silicon alloy solar cells
Author :
Xu, Xixiang ; Yang, Jeffrey C. ; Guha, Subhendu
Author_Institution :
United Solar Syst. Ltd., Troy, MI, USA
Abstract :
The authors have studied the light-induced degradation and saturation behavior of component cells for double- and triple-junction a-Si alloy solar cells. Top a-Si alloy cells reach saturation after 300 hours of one-sun light soaking with 10-12% degradation. Both middle and bottom a-SiGe alloy cells show signs of saturation at around 600 hours under simulated light illumination appropriate for these cells; the degradation after 1000 hours of exposure is 16-18%. Based on this study it is estimated that double-junction cells will degrade by 12-18%, and triple-junction cells will degrade by 10-18%. Experimental results also reveal that the degradation of top cells, particularly in open-circuit voltage, is determined by the bulk properties instead of the interface between p and i layers. Further improvement of bulk intrinsic layer quality of top cells can reduce the degradation of multijunction solar cells
Keywords :
Ge-Si alloys; amorphous semiconductors; p-n junctions; semiconductor junctions; solar cells; stability; 300 to 1000 h; SiGe; bottom a-SiGe alloy cells; bulk intrinsic layer quality; double-junction solar cells; middle a-SiGe alloy cells; multijunction amorphous silicon alloy solar cells; multijunction solar cells degradation; one-sun light soaking; open-circuit voltage; stability; top a-Si alloy cells; triple-junction solar cells; Amorphous silicon; Current density; Degradation; Filters; Lighting; Photovoltaic cells; Silicon alloys; Solar system; Stability; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347088