High efficiency a-Si:H solar cells by single chamber method

Author

Nii, T. ; Kase, T. ; Sichanugrist, P.

Author_Institution

Central Res. & Dev. Lab., Showa Shell Sekiyu K.K., Kanagawa, Japan

fYear

1993

fDate

10-14 May 1993

Firstpage

941

Lastpage

945

Abstract

High efficiency hydrogenated amorphous silicon (a-Si:H) solar cells were developed by plasma chemical vapor deposition (P-CVD) using a single chamber. Three techniques to improve the cell efficiency are developed and discussed; (1) obtaining ohmic contact with low resistance at the TCO/p-layer junction employing a-SiO_x film for TCO/p-layer interface; (2) application of high quality p-type a-SiC:H films by using a two types of doping gas, trimethylboron(TMB) and B₂H₆; and (3) zinc oxide (ZnO)/Ag films were used as the back electrode layer. Application of the above three techniques to a single cell of 2.8 cm² size results in the increase of the conversion efficiency above 11.7%

Keywords

amorphous semiconductors; electrical contacts; elemental semiconductors; hydrogen; materials preparation; plasma CVD; plasma CVD coatings; semiconductor doping; semiconductor junctions; silicon; solar cells; 11.7 percent; B₂H₆; Si:H; SiC:H; TCO/p-layer junction; ZnO-Ag; a-Si:H solar cells; a-SiO_x film; back electrode layer; conversion efficiency; doping gas; high efficiency; high quality p-type a-SiC:H films; low resistance; ohmic contact; plasma chemical vapor deposition; single chamber method; trimethylboron; Amorphous silicon; Chemical vapor deposition; Contact resistance; Doping; Electrodes; Ohmic contacts; Photovoltaic cells; Plasma applications; Plasma chemistry; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347094

Filename

347094