Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells

Author

Wenas, Wilson W. ; Yoshino, Masahiro ; Tabuchi, Katsuya ; Yamada, Akira ; Konagai, Makoto ; Takahashi, Kiyoshi

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

fYear

1993

fDate

10-14 May 1993

Firstpage

935

Lastpage

940

Abstract

Large-area ZnO films with high-transparency and high-conductivity were successfully grown on the 10×10 cm² substrates by the photo-MOCVD technique at a very low temperature of 135°C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation level of 5%. The obtained ZnO films were applied to a-Si solar cells as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3 mm×3 mm) was obtained

Keywords

CVD coatings; II-VI semiconductors; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; materials preparation; semiconductor growth; semiconductor thin films; silicon; solar cells; zinc compounds; 12 percent; 135 C; Si; ZnO; a-Si solar cells; conversion efficiency; high-conductivity; high-transparency; large-area ZnO films; photo-MOCVD growth; transparent conducting oxide; uniform crystallinity; uniform resistivity; uniform thickness; Conductive films; Conductivity; Gases; Glass; Light sources; MOCVD; Photovoltaic cells; Plasma temperature; Surface morphology; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347095

Filename

347095