Temperature measurement of Al metallization and the study of Black´s model in high current density

Author

Sakimoto, Masanori ; Itoo, T. ; Fujii, Takako ; Yamaguchi, Hironaru ; Eguchi, Kinya

Author_Institution

Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

4-6 April 1995

Firstpage

333

Lastpage

341

Abstract

The temperature of 1 micrometer dia spot on a conductor was measured for the first time and compared with the predictions of the simulation model and with the data obtained by the line resistance method. Experiments were carried out to determine the dependence of electromigration lifetime on current density and temperature with an accurate measurement of temperature. These data support that the parameters of Black´s model are constant at low as well as high current density range.

Keywords

aluminium; current density; electromigration; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; temperature measurement; 1 micron; Al; Al metallization; Black´s model; electromigration lifetime; high current density; line resistance method; simulation model; temperature measurement; Conductors; Current density; Density measurement; Electrical resistance measurement; Electromigration; Metallization; Predictive models; Temperature dependence; Temperature measurement; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2031-X

Type

conf

DOI

10.1109/RELPHY.1995.513700

Filename

513700