A study of amorphous silicon-carbon alloy solar cells

Author

Li, Yong-Ming ; Jackson, F. ; Arya, R.R.

Author_Institution

Thin Film Div., Solarex Corp., Newtown, PA, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

850

Lastpage

854

Abstract

Progress in optimizing deposition conditions has significantly improved the opto-electronic properties of intrinsic a-SiC:H alloys. These improvements have been incorporated in single junction p-i-n solar cells. Open circuit voltage V_oc as high as 1.04 V and fill factor (FF) as high as 0.75 have been demonstrated. The stability of these devices has also been remarkably improved. The best single junction solar cell with ~1000 A thick a-SiC:H i-layer shows only 13% degradation and retains V_oc=0.98 V and FF=0.68 after 1700 hours of light-soaking under AM1.5 equivalent illumination

Keywords

amorphous semiconductors; energy gap; hydrogen; optical constants; silicon compounds; solar cells; 1000 A; AM1.5 equivalent illumination; SiC:H; amorphous silicon-carbon alloy solar cells; deposition conditions optimisation; fill factor; intrinsic a-SiC:H alloys; light-soaking; open circuit voltage; single junction p-i-n solar cells; stability; Amorphous materials; Electron optics; Optical films; PIN photodiodes; Photonic band gap; Photovoltaic cells; Silicon alloys; Sputtering; Steady-state; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347110

Filename

347110