DocumentCode :
2311139
Title :
An optimum design of a a-Si//poly-Si tandem solar cell
Author :
Ma, W. ; Horiuchi, T. ; Lim, C.C. ; Goda, K. ; Okamoto, H. ; Hamakawa, Y.
Author_Institution :
Fac. of Eng. Sci., Osaka Univ., Japan
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
833
Lastpage :
838
Abstract :
A systematic investigation of a high efficiency a-Si//poly-Si four-terminal structure tandem solar cell has been made using both theoretical and experimental approaches. It has been shown from optimum design theory, used on a realistically attainable best efficiency, that the best combination of a tandem solar cell is a-Si/poly-Si silicon materials with respect to high achievable efficiency. In the optical design rule, priority of the photon utilization is put on the poly-Si bottom cell. Employing high conductivity with wide optical band gap p type μc-SiC as a window material and n type μc-Si as back ohmic contact with BSF treatment, a conversion efficiency of 17.2% has been obtained for the poly-Si cell. An optimum design of the a-Si top cell has been experimentally made on a p μc-SiC/p a-SiC/i a-Si/n μc-Si/ITO structure, and an efficiency of 7.25% has been obtained with a 100 nm thick i-layer top cell. The best efficiency of a p-i-n single-junction solar cell with this structure is 12.3% so far with a 500 nm i-layer thickness device using an Ag back electrode. With a 100 nm thick ultra thin top cell, a total conversion efficiency of an a-Si//poly-Si four-terminal tandem solar cell as high as 21.0% has been achieved
Keywords :
amorphous semiconductors; design engineering; elemental semiconductors; optimisation; p-n heterojunctions; semiconductor device models; semiconductor device testing; silicon; solar cells; 100 nm; 12.3 percent; 17.2 percent; 21 percent; 500 nm; 7.25 percent; BSF treatment; Si-ITO; Si-InSnO; Si-Si; SiC; a-Si/poly-Si; back electrode; back ohmic contact; bottom cell; conductivity; four-terminal structure; i-layer; optical band gap; optical design; optimum design; p-i-n; photon utilization; tandem solar cell; top cell; window material; Conducting materials; Conductivity; Indium tin oxide; Ohmic contacts; Optical design; Optical materials; PIN photodiodes; Photonic band gap; Photovoltaic cells; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347113
Filename :
347113
Link To Document :
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