Effect of Al alloy and stacked film composition on linewidth dependence of electromigration lifetime

Author

Atakov, E.M. ; Ling, J. ; Maziarz, J. ; Shepela, A. ; Miner, B. ; England, C. ; Harris, W. ; Dunnell, D.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

fYear

1995

fDate

4-6 April 1995

Firstpage

342

Lastpage

352

Abstract

Al alloy composition and the type of the underlayer are among the process variables which determine the residual stress in VLSI interconnects. The residual stress affects the critical reliability parameter, threshold product. Effect of linewidth on electromigration lifetime is correlated with the linewidth dependence of residual stress and microstructure. The lifetime of submicron lines is limited by stress/microstructure gradients at wide/narrow transitions. Process implications are discussed.

Keywords

VLSI; aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; internal stresses; palladium alloys; Al alloy composition; AlCu-Ti-TiN-Ti; AlPd-Ti-TiN-Ti; VLSI interconnects; electromigration lifetime; linewidth dependence; reliability parameter; residual stress; stacked film composition; stress/microstructure gradients; submicron line lifetime; threshold product; underlayer type; wide/narrow transitions; Aluminum alloys; Annealing; Artificial intelligence; Electromigration; Grain size; Residual stresses; Sputtering; Temperature; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2031-X

Type

conf

DOI

10.1109/RELPHY.1995.513701

Filename

513701