• DocumentCode
    23112
  • Title

    Superconducting Light-Emitting Diodes

  • Author

    Mou, Sinthia Shabnam ; Irie, Hiroshi ; Asano, Yasuhiro ; Akahane, Kouichi ; Kurosawa, Hiroyuki ; Nakajima, Hideaki ; Kumano, Hidekazu ; Sasaki, Masahide ; Suemune, Ikuo

  • Author_Institution
    Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
  • Volume
    21
  • Issue
    2
  • fYear
    2015
  • fDate
    March-April 2015
  • Firstpage
    1
  • Lastpage
    11
  • Abstract
    Cooper pairs form spin singlet states and are regarded as entangled electron pairs. Extracting entangled electrons has been actively studied by the use of superconductor-normal metal junctions. We have proposed to convert Cooper pairs to entangled photon pairs via interband radiative recombination of Cooper pairs penetrated into a semiconductor by the proximity effect. We fabricated a superconducting (SC) light emitting diode, where a superconductor is used for the n-type electrode. We observed light output enhancement and recombination lifetime shortening below the SC critical temperature. Our observations were very well explained with an analysis based on a time-dependent perturbation theory of the radiative recombination. Superconductivity was included via the Bogoliubov transformation. We present our measurements on the Cooper-pair-enhanced luminescence from InAs quantum dots. We demonstrate the observation of sharp edge in the luminescence spectra that reflects the SC density of states.
  • Keywords
    Cooper pairs; III-V semiconductors; indium compounds; light emitting diodes; optical fabrication; optical materials; perturbation theory; photoluminescence; quantum entanglement; quantum optics; semiconductor quantum dots; superconducting devices; Bogoliubov transformation; Cooper-pair-enhanced luminescence; InAs; InAs quantum dots; SC critical temperature; SC density states; entangled electron pairs; entangled photon pairs; interband radiative recombination; light output enhancement; luminescence spectra; n-type electrode; proximity effect; recombination lifetime shortening; semiconductor; sharp edge; spin singlet states; superconducting light emitting diode fabrication; superconducting light-emitting diodes; superconductivity; superconductor-normal metal junctions; time-dependent perturbation theory; Charge carrier processes; Electrodes; Josephson junctions; Luminescence; Radiative recombination; Superconductivity; light emitting diode (LED); quantum dots (QDs); semiconductor epitaxial layers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2014.2346617
  • Filename
    6876133