Title :
Status, progress and challenges in high performance, stable amorphous silicon alloy based triple junction modules
Author :
Arya, R.R. ; Yang, L. ; Bennett, M. ; Newton, J. ; Li, Y.M. ; Fieselmann, B. ; Chen, L.F. ; Rajan, K. ; Wood, G. ; Poplawski, C. ; Wilczynski, A.
Author_Institution :
Thin Film Div., Solarex Corp., Newtown, PA, USA
Abstract :
Advances in intrinsic amorphous silicon and microcrystalline n-layers has resulted in triple junction solar cell modules with initial efficiencies over 11% and stabilized efficiencies of about 9%. Remarkable improvements have been made in intrinsic a-SiC:H alloys. This has led to the demonstration of p-i-n solar cells with Vocs as high as 1.04 V and fill-factors as high as 0.74. These single-junction solar cells with a-SiC:H i-layers only degrade by 13% after 1700 hours of light-soaking
Keywords :
amorphous semiconductors; elemental semiconductors; p-n heterojunctions; semiconductor doping; silicon; silicon alloys; solar cells; 1.04 V; 1700 h; 9 percent; Si; Si:H; SiC:H; fill factors; intrinsic amorphous semiconductor; light soaking; open circuit voltage; p-i-n solar cells; performance; stability; triple junction solar cell; Amorphous silicon; Degradation; Optical films; PIN photodiodes; Photonic band gap; Photovoltaic cells; Semiconductor films; Silicon alloys; Stability; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347120
