Proton irradiation induced defects in Cd and Zn doped InP

Author

Rybicki, George C. ; Williams, Wendell S.

Author_Institution

Photovoltaics Branch, NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

786

Lastpage

789

Abstract

Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

Keywords

III-V semiconductors; annealing; cadmium; deep level transient spectroscopy; defect electron energy states; heavily doped semiconductors; indium compounds; proton effects; solar cells; zinc; InP:Cd; InP:Zn; InP:Zn(Cd); annealing rate; deep level transient spectroscopy; defect properties; proton irradiation induced defects; radiation resistance; solar cell; Annealing; Energy capture; Energy states; Indium phosphide; Photovoltaic cells; Protons; Schottky barriers; Schottky diodes; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347121

Filename

347121