Title :
Preferentially etched epitaxial liftoff of indium phosphide
Author :
Bailey, Sheila G. ; Wilt, David M. ; DeAngelo, Frank L. ; Clark, Eric B.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The removal of an indium phosphide (InP) epitaxial layer from an InP substrate has been demonstrated by a preferentially etched epitaxial liftoff (PEEL) technique. The release layer is lattice matched InGaAs which is selectively etched. Results of several combinations of etchants are included. Two etchants yielded the desired peeling effect: HF: H2O2: H2O (1:1:10) and citric acid: water: peroxide (1:1:8). Apiezon black wax is used to provide compression to the InP film to facilitate peeling of the film. The film and substrate remain in good condition after the PEEL process. Application of this technique to thin InP solar cells is discussed
Keywords :
III-V semiconductors; etching; indium compounds; semiconductor epitaxial layers; solar cells; Apiezon black wax; InGaAs; InP; InP film compression; InP substrate; indium phosphide; lattice matched InGaAs; preferentially etched epitaxial liftoff; release layer; selective etching; thin InP solar cells; Etching; Hafnium; Indium gallium arsenide; Indium phosphide; Lattices; Optical devices; Optical films; Photovoltaic cells; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347122
