Preferentially etched epitaxial liftoff of indium phosphide

Author

Bailey, Sheila G. ; Wilt, David M. ; DeAngelo, Frank L. ; Clark, Eric B.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

783

Lastpage

785

Abstract

The removal of an indium phosphide (InP) epitaxial layer from an InP substrate has been demonstrated by a preferentially etched epitaxial liftoff (PEEL) technique. The release layer is lattice matched InGaAs which is selectively etched. Results of several combinations of etchants are included. Two etchants yielded the desired peeling effect: HF: H₂O₂: H₂O (1:1:10) and citric acid: water: peroxide (1:1:8). Apiezon black wax is used to provide compression to the InP film to facilitate peeling of the film. The film and substrate remain in good condition after the PEEL process. Application of this technique to thin InP solar cells is discussed

Keywords

III-V semiconductors; etching; indium compounds; semiconductor epitaxial layers; solar cells; Apiezon black wax; InGaAs; InP; InP film compression; InP substrate; indium phosphide; lattice matched InGaAs; preferentially etched epitaxial liftoff; release layer; selective etching; thin InP solar cells; Etching; Hafnium; Indium gallium arsenide; Indium phosphide; Lattices; Optical devices; Optical films; Photovoltaic cells; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347122

Filename

347122