DocumentCode
2311289
Title
Driving waveforms for class-F power amplifiers [GaAs MESFETs]
Author
Rudiakova, A.N. ; Krizhanovski, V.G.
Author_Institution
Dept. of Radiophys., Donetsk State Univ., Ukraine
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
473
Abstract
High efficiency of power amplifiers can be reached if the active device output current and voltage have the maximally flat waveforms. The existing conventional conditions to provide such waveforms are not sufficient. The additional conditions were obtained in this paper.
Keywords
III-V semiconductors; MESFET circuits; gallium arsenide; microwave circuits; microwave power amplifiers; GaAs; MESFETs; active device output current; class-F power amplifiers; driving waveforms; efficiency; maximally flat waveforms; microwave power amplifiers; Frequency; Gallium arsenide; High power amplifiers; Impedance; Microwave amplifiers; Microwave circuits; Microwave devices; Power amplifiers; Power system harmonics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.861076
Filename
861076
Link To Document