Raman, photoluminescence, and SEM studies of CdS and CdTe films grown by RF sputtering and laser physical vapor deposition

Author

Bohn, Randy G. ; Li, Yuxin ; Shao, Meilun ; Tabory, Charles N. ; Feng, Zhirong ; Fischer, Andreas ; Compaan, Alvin D.

Author_Institution

Dept. of Phys. & Astron., Toledo Univ., OH, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

510

Lastpage

515

Abstract

Polycrystalline films of CdS, CdTe, as well as CdS/CdTe heterojunctions grown by RF magnetron sputtering and by pulsed laser physical vapor deposition are studied using the techniques of SEM, photoluminescence (PL), and Raman scattering. By correlating grain sizes and spectral features we have been able to optimize growth temperatures. Optical studies of the buried heterojunction and the spectral response of the cell have led to optimization of post-growth anneal times and layer thicknesses

Keywords

CVD coatings; II-VI semiconductors; Raman spectra of inorganic solids; cadmium compounds; p-n heterojunctions; photoluminescence; scanning electron microscope examination of materials; semiconductor growth; semiconductor thin films; solar cells; sputtered coatings; CdS films; CdS-CdTe; CdS/CdTe heterojunctions; CdTe films; RF sputtering; Raman scattering; SEM; buried heterojunction; grain sizes; laser physical vapor deposition; layer thicknesses; optical studies; photoluminescence; polycrystalline films; post-growth anneal times; solar cells; spectral features; Chemical vapor deposition; Heterojunctions; Laser theory; Optical films; Optical pulses; Photoluminescence; Pulsed laser deposition; Radio frequency; Raman scattering; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347128

Filename

347128