Title :
Thick GaN Layers Deposited by Hydride Vapour Phase Epitaxy
Author :
Prazmowska, Joanna ; Korbutowicz, Ryszard ; Syperek, Marcin
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol.
fDate :
June 30 2006-July 2 2006
Abstract :
Hydride vapour phase epitaxy (HVPE) is one of the most promising methods to grow thick GaN layers because of high rate of grown. It is caused mainly by its relative simplicity. Additionally HVPE growth apparatus are well established and cheap. This method allows the deposition of high quality thick GaN layers. GaN layers were grown on alternative substrates using HVPE. Three step technologies were applied. The layers with low density of screw dislocations and pits were obtained. SEM, PL, X-ray rocking curve characterization technique were applied to examine the quality of GaN thick epitaxial layer
Keywords :
III-V semiconductors; gallium compounds; optical materials; photoluminescence; scanning electron microscopy; screw dislocations; semiconductor epitaxial layers; vapour phase epitaxial growth; GaN; GaN thick epitaxial layer quality; PL; SEM; X-ray rocking curve characterization technique; hydride vapour phase epitaxy growth; pits; screw dislocations; thick GaN layers deposition; Crystallization; Epitaxial growth; Fasteners; Gallium nitride; III-V semiconductor materials; Lattices; Nitrogen; Photonics; Substrates; Temperature;
Conference_Titel :
Photonics and Microsystems, 2006 International Students and Young Scientists Workshop
Conference_Location :
Wroclaw
Print_ISBN :
1-4244-0392-8
Electronic_ISBN :
1-4244-0393-6
DOI :
10.1109/STYSW.2006.343668
