Thick GaN Layers Deposited by Hydride Vapour Phase Epitaxy

Author

Prazmowska, Joanna ; Korbutowicz, Ryszard ; Syperek, Marcin

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol.

fYear

2006

fDate

June 30 2006-July 2 2006

Firstpage

46

Lastpage

49

Abstract

Hydride vapour phase epitaxy (HVPE) is one of the most promising methods to grow thick GaN layers because of high rate of grown. It is caused mainly by its relative simplicity. Additionally HVPE growth apparatus are well established and cheap. This method allows the deposition of high quality thick GaN layers. GaN layers were grown on alternative substrates using HVPE. Three step technologies were applied. The layers with low density of screw dislocations and pits were obtained. SEM, PL, X-ray rocking curve characterization technique were applied to examine the quality of GaN thick epitaxial layer

Keywords

III-V semiconductors; gallium compounds; optical materials; photoluminescence; scanning electron microscopy; screw dislocations; semiconductor epitaxial layers; vapour phase epitaxial growth; GaN; GaN thick epitaxial layer quality; PL; SEM; X-ray rocking curve characterization technique; hydride vapour phase epitaxy growth; pits; screw dislocations; thick GaN layers deposition; Crystallization; Epitaxial growth; Fasteners; Gallium nitride; III-V semiconductor materials; Lattices; Nitrogen; Photonics; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Microsystems, 2006 International Students and Young Scientists Workshop

Conference_Location

Wroclaw

Print_ISBN

1-4244-0392-8

Electronic_ISBN

1-4244-0393-6

Type

conf

DOI

10.1109/STYSW.2006.343668

Filename

4149607