38 GHz MMIC PHEMT-based tripler with low phase-noise properties

Author

Boudiaf, A. ; Bachelet, D. ; Rumelhard, C.

Author_Institution

ATN Microwave, North Billerica, MA, USA

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

509

Abstract

Frequency translation circuits are key elements in communication systems. This paper presents a frequency tripler for 38 GHz short-range communication systems, designed using a pseudomorphic high electron-mobility transistor (PHEMT) technology. The successful first iteration MMIC achieved a state-of-the-art output power of 3.1 dBm and a minimum conversion loss of 3.4 dB. The multiplier exhibits a conversion efficiency of 11% and average phase noise degradation at 10 kHz and 100 kHz offset-frequency from carrier of 9/spl plusmn/1 dB. To our knowledge, this is the first reported Ka-band single-stage frequency tripler based on PHEMT technology that has been fully characterized for phase noise degradation.

Keywords

HEMT integrated circuits; MMIC frequency convertors; field effect MIMIC; frequency multipliers; integrated circuit design; integrated circuit noise; millimetre wave frequency convertors; phase noise; 11 percent; 3.4 dB; 38 GHz; Ka-band; MMIC PHEMT-based tripler; PHEMT technology; high electron-mobility transistor; low phase-noise properties; pseudomorphic HEMT; short-range communication systems; single-stage frequency tripler; Degradation; FETs; Frequency; HEMTs; Local oscillators; MMICs; PHEMTs; Phase modulation; Phase noise; Power harmonic filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861095

Filename

861095