An increase of the electromigration reliability of ohmic contacts by enhancing backflow effect

Author

Zhang, Wei ; Li, Z.G. ; Cheng, Y.H. ; Guo, W.L. ; Wang, Z. ; Sun, Y.H. ; Li, X.X.

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

1995

fDate

4-6 April 1995

Firstpage

365

Lastpage

370

Abstract

A novel multi-layered contact metallization structure is proposed, in which the backflow effect is intentionally enhanced to restrain electromigration in contact metallization. Under accelerated conditions of constant and pulsed DC, including current, frequency and temperature ramps, the experiments indicate an evident improvement for the novel backflow-hardened contacts over the traditional structures in the dependence of electromigration on current density, frequency, duty factor and temperature.

Keywords

current density; electromigration; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; life testing; ohmic contacts; accelerated conditions; backflow effect enhancement; current density; current ramps; duty factor; electromigration reliability; frequency dependence; frequency ramps; multilayered contact metallization structure; ohmic contacts; pulsed DC; temperature dependence; temperature ramps; Acceleration; Contact resistance; Current density; Electromigration; Frequency; Kelvin; Metallization; Ohmic contacts; Temperature dependence; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2031-X

Type

conf

DOI

10.1109/RELPHY.1995.513704

Filename

513704