DocumentCode
2311638
Title
Thin film CuInGaSe2 cell development
Author
Chen, Wen S. ; Stewart, J.M. ; Devaney, W.E. ; Mickelsen, RA ; Stanbery, B.J.
Author_Institution
Boeing Defense & Space Group, Seattle, WA, USA
fYear
1993
fDate
10-14 May 1993
Firstpage
422
Lastpage
425
Abstract
The characteristics of polycrystalline, thin film CuIn1-X GaXSe2 (CIGS)/ZnO solar cells with a total area efficiency of 13.7% are reported. These nominally 1 cm2 cells are prepared by elemental coevaporation of the selenide material, chemical deposition of a thin (20-30 nm) CdZnS layer and RF magnetron sputtering of the ZnO transparent conductive film. The Ga and Zn contents were measured to be 26% and 20%, respectively. The authors attribute the improved performance over their previous CIGS cells to a slightly higher Ga concentration and to the preparation of ZnO films with lower optical losses
Keywords
CVD coatings; copper compounds; indium compounds; materials preparation; semiconductor growth; semiconductor thin films; solar cells; sputtered coatings; ternary semiconductors; 13.7 percent; 20 to 30 nm; CdZnS; CuInGaSe2; CuInGaSe2-ZnO; RF magnetron sputtering; ZnO transparent conductive film; chemical deposition; elemental coevaporation; polycrystalline solar cells; selenide material; thin film CuIn1-XGaXSe2ZnO solar cells; Chemical elements; Conducting materials; Conductive films; Magnetic materials; Optical films; Photovoltaic cells; Radio frequency; Sputtering; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347145
Filename
347145
Link To Document