Title :
Modeling and operation analysis of a Three-terminal heterojunction bipolar phototransistor
Author :
Ghadimi, A. ; Ahmadpour, A. ; Ahadpour, A. ; Ahmadi, V.
Author_Institution :
Lahijan Branch, Fac. of Electr. Eng., Islamic Azad Univ., Lahijan, Iran
Abstract :
Phototransistors have many applications in Integrated Optic Receivers. In this paper, analysis of noise reactions in a Heterojunction Bipolar Transistor (HBT) which is used in the form of Three-terminal (3T) photodetector, has been presented. In this research, S/N ratio in output, noises and main parameters have been considered. This model can be used for InP/InGaAs characteristics which in the form of optical detector in 1.55 um wave-length region.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; heterojunction bipolar transistors; indium compounds; photodetectors; phototransistors; semiconductor device models; semiconductor device noise; InP-InGaAs; avalanche photodiode; noise reaction analysis; optical detector; three-terminal heterojunction bipolar phototransistor; three-terminal photodetector; wavelength 1.55 mum; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated optics; Optical detectors; Optical noise; Optical receivers; Photodetectors; Phototransistors; Signal to noise ratio; Avalanche Photodiode (APD); Heterojunction Bipolar Phototransistor (HBT); Photodetector;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on
Conference_Location :
Pattaya, Chonburi
Print_ISBN :
978-1-4244-3387-2
Electronic_ISBN :
978-1-4244-3388-9
DOI :
10.1109/ECTICON.2009.5137044
