Modeling and operation analysis of a Three-terminal heterojunction bipolar phototransistor

Author

Ghadimi, A. ; Ahmadpour, A. ; Ahadpour, A. ; Ahmadi, V.

Author_Institution

Lahijan Branch, Fac. of Electr. Eng., Islamic Azad Univ., Lahijan, Iran

fYear

2009

fDate

6-9 May 2009

Firstpage

444

Lastpage

447

Abstract

Phototransistors have many applications in Integrated Optic Receivers. In this paper, analysis of noise reactions in a Heterojunction Bipolar Transistor (HBT) which is used in the form of Three-terminal (3T) photodetector, has been presented. In this research, S/N ratio in output, noises and main parameters have been considered. This model can be used for InP/InGaAs characteristics which in the form of optical detector in 1.55 um wave-length region.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; heterojunction bipolar transistors; indium compounds; photodetectors; phototransistors; semiconductor device models; semiconductor device noise; InP-InGaAs; avalanche photodiode; noise reaction analysis; optical detector; three-terminal heterojunction bipolar phototransistor; three-terminal photodetector; wavelength 1.55 mum; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated optics; Optical detectors; Optical noise; Optical receivers; Photodetectors; Phototransistors; Signal to noise ratio; Avalanche Photodiode (APD); Heterojunction Bipolar Phototransistor (HBT); Photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on

Conference_Location

Pattaya, Chonburi

Print_ISBN

978-1-4244-3387-2

Electronic_ISBN

978-1-4244-3388-9

Type

conf

DOI

10.1109/ECTICON.2009.5137044

Filename

5137044