Title :
ZnO/CdS/Cu(In,Ga)Se2 thin film solar cells with improved performance
Author :
Hedström, Jonas ; Ohlsén, Haan ; Bodegárd, Marika ; Kylner, Angela ; Stolt, Lars ; Hariskos, Dimitri ; Ruckh, Martin ; Schock, Hans-Werner
Author_Institution :
Swedish Inst. of Microelectron., Sweden
Abstract :
This paper reports results from experiments concerning the growth of CuInSe2 films on different substrate materials, uncoated, and coated with molybdenum. Specifically the effect on the structure, i.e. preferred orientation, of the polycrystalline films is investigated. It is found that soda-lime float glass results in the most oriented films and also that the highest solar cell conversion efficiency is obtained with devices made from such films. In another set of experiments the effect of various deposition conditions for the ZnO window layer is studied. It is found that optimum performance is not strongly dependent on the deposition process. The highly doped part of the window, ZnO:Al, has been replaced with ITO on some devices and a comparison is made. Finally, ZnO/CdS/CuInSe2 and ZnO/CdS/Cu(In,Ga)Se2 thin film devices exhibiting active area conversion efficiencies of 15.4% and 16.9%, respectively, are demonstrated
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; 15.4 percent; 16.9 percent; ZnO; ZnO-CdS-CuInGaSe2; ZnO-CdS-CuInSe2; conversion efficiency; deposition conditions; growth; performance; polycrystalline films; preferred orientation; soda-lime float glass; solar cells; substrate; thin film semiconductors; window layer; Glass; Microelectronics; Photovoltaic cells; Photovoltaic systems; Solid state circuits; Substrates; Thin film devices; Transistors; Windows; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347154