15.9% efficiency for Si thin film concentrator solar cell grown by LPE

Author

Wagner, B.F. ; Schetter, Ch ; Sulima, O.V. ; Bett, A.

Author_Institution

Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany

fYear

1993

fDate

10-14 May 1993

Firstpage

356

Lastpage

359

Abstract

A thin film (20 μm) monocrystalline silicon layer was grown by liquid phase epitaxy on a silicon substrate. Solar cells with an area of 5×5 mm² were made from the epitaxial layers and achieved an efficiency of 15.9% at 30 Suns under AM1.5 illumination. The maximum one Sun efficiency of these cells was 13.3%. Another approach to produce thin film Si solar cells was to use a recrystallized 30 μm thin boron doped CVD Si layer on an oxidized silicon substrate. These cells obtained an efficiency of 6.4% (2 cm², one Sun AM1.5)

Keywords

boron; elemental semiconductors; liquid phase epitaxial growth; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; solar energy concentrators; vapour phase epitaxial growth; 15.9 percent; 20 mum; 30 mum; 5 mm; 6.4 percent; CVD; Si; doping; epitaxial layers; illumination; liquid phase epitaxy; monocrystalline semiconductor; oxidization; recrystallization; substrate; thin film concentrator solar cell; Crystalline materials; Crystallization; Epitaxial growth; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Silicon; Substrates; Sun; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347156

Filename

347156