DocumentCode
2311856
Title
Heterostructure bipolar transistors and circuits
Author
Tiwari, Sandip
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1988
fDate
7-9 Jun 1988
Firstpage
1705
Abstract
The author reviews the progress and basic considerations, and investigates the trends, for the heterostructure bipolar transistor and its digital and analog circuits. The state of the art is reviewed, with attention given to the highest speeds of any semiconductor device and a large level of integration, including the first implementations of compound semiconductor devices in microprocessors. This is followed by a critique of technology trends and future directions, and a summary of scaling considerations of the device. Emphasis is placed on the GaAlAs-GaAs heterostructure system
Keywords
bipolar integrated circuits; heterojunction bipolar transistors; reviews; GaAlAs-GaAs; HBT; analog circuits; bipolar IC; compound semiconductor devices; digital circuits; heterostructure bipolar transistor; integration; reviews; Bipolar transistors; Circuits; Delay; Frequency; Heterojunction bipolar transistors; Logic arrays; Logic devices; Microprocessors; Microwave devices; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location
Espoo
Type
conf
DOI
10.1109/ISCAS.1988.15263
Filename
15263
Link To Document