• DocumentCode
    2311957
  • Title

    III–V quantum dot lasers on Si substrates by wafer bonding

  • Author

    Tanabe, Katsuaki ; Arakawa, Yasuhiko

  • Author_Institution
    Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    820
  • Lastpage
    821
  • Abstract
    We present 1.3 μm InAs/GaAs quantum dot Fabry-Perot and photonic crystal nanocavity lasers on Si substrates fabricated by wafer bonding, with thresholds of 205 A/cm2 and 2 μW, respectively, the lowest of lasers on silicon.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; nanophotonics; optical fabrication; photonic crystals; quantum dot lasers; wafer bonding; III-V quantum dot lasers; InAs-GaAs-Si; Si; Si substrates; photonic crystal nanocavity laser; power 2 muW; quantum dot Fabry-Perot nanocavity laser; wafer bonding; wavelength 1.3 mum; Gallium arsenide; Quantum dot lasers; Silicon; Substrates; Wafer bonding; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6359246
  • Filename
    6359246
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2311957