Designs of switched-capacitor comparator using low-voltage floating-gate MOS transistors

Author

Moolpho, Kornika ; Ngarmnil, Jitkasame

Author_Institution

Dept. of Machatronics Eng., Mahanakorn Univ. of Technol., Bangkok, Thailand

fYear

2009

fDate

6-9 May 2009

Firstpage

568

Lastpage

571

Abstract

A new structure of comparator circuit based on a pair of complementary floating-gate (FG) MOS transistors is introduced in this paper. Our main design purpose is to focus on low complexity structure and low operating supply voltage. The comparator comprises two stage amplifiers: differential input stage and gain stage. Simulation results from Hspice on 0.25 mum TSMC CMOS technology and 1.5 V power supply are demonstrated. Power consumption of 0.89 muW can be achieved on the operation at 10 MHz and input offset of 50 muV.

Keywords

CMOS integrated circuits; MOSFET; amplifiers; comparators (circuits); low-power electronics; switched capacitor networks; TSMC CMOS technology; frequency 10 MHz; low-voltage floating-gate MOS transistor; power 0.89 muW; size 0.25 mum; switched-capacitor comparator design; two-stage amplifier; voltage 1.5 V; voltage 50 muV; CMOS technology; Capacitors; Circuit simulation; Design engineering; Inverters; Low voltage; MOSFETs; Power supplies; Switches; Switching circuits; Inverter; Voltage comparator; floating-gate MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on

Conference_Location

Pattaya, Chonburi

Print_ISBN

978-1-4244-3387-2

Electronic_ISBN

978-1-4244-3388-9

Type

conf

DOI

10.1109/ECTICON.2009.5137071

Filename

5137071