Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs

Author

Wei, H.F. ; Kalkhoran, N.M. ; Namavar, F. ; Chung, J.E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

739

Lastpage

742

Abstract

This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.<>

Keywords

carrier lifetime; electric breakdown of solids; elemental semiconductors; germanium; insulated gate field effect transistors; ion implantation; minority carriers; semiconductor-insulator boundaries; silicon; SOI n-MOSFETs; Si:Ge; back interface region; breakdown voltage; channel defect engineering; ion implantation; minority carrier lifetime killer; off-state leakage; parasitic bipolar effect; source-to-drain breakdown voltage; structural defects; Annealing; Boron; Charge carrier lifetime; Degradation; Fabrication; Implants; Low voltage; MOSFET circuits; Oxidation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347207

Filename

347207