Title :
A physical model including velocity overshoot for drain current of sub-0.15 /spl mu/m MOSFET´s
Author :
De, V.K. ; Agrawal, B. ; Meindl, J.D.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
An analytical model is developed to describe the drain-current characteristics of small-geometry (i.e. sub-0.15 /spl mu/m) bulk MOSFET´s including both non-local transport and 3D channel charge control. The model is used to investigate effects of velocity overshoot and subthreshold degradation on the performance and scaling of bulk Si MOSFET´s.<>
Keywords :
carrier mobility; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 0.15 micron; 3D channel charge control; MOSFETs; Si; bulk Si devices; drain-current characteristics; nonlocal transport; physical model; scaling; small-geometry devices; subthreshold degradation; velocity overshoot; Analytical models; Current-voltage characteristics; Degradation; Electron mobility; Electrostatics; Integral equations; MOSFET circuits; Nonuniform electric fields; Poisson equations; Velocity control;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347212
