DocumentCode
2312350
Title
Oxide-charge generation during hot-carrier degradation of PMOSTs
Author
Woltjer, R. ; Paulzen, G.M.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
713
Lastpage
716
Abstract
A new model for oxide-charge generation in PMOSFETs is proposed and verified experimentally. It incorporates Coulomb repulsion and it takes the spatial distribution of the injection into account. It predicts the time dependencies of the gate current, oxide charge, threshold voltage and transconductance. Finally, an extension towards a two-step degradation mechanism is discussed.<>
Keywords
hot carriers; insulated gate field effect transistors; semiconductor device models; Coulomb repulsion; PMOSFETs; gate current; hot-carrier degradation; injection; model; oxide-charge generation; spatial distribution; threshold voltage; transconductance; two-step degradation; Analytical models; Degradation; FETs; Hot carriers; Kinetic theory; Laboratories; MOSFETs; Predictive models; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347213
Filename
347213
Link To Document