Low contact resistivity ohmic contacts to 6H-silicon carbide

Author

Dev Alok ; Baliga, B.J. ; McLarty, P.K.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

691

Lastpage

694

Abstract

The resistivity of ohmic contacts to N/sup +/ 6H-silicon carbide substrates, with Ti as the contact material, was studied using the circular TLM structure. Two dimensional numerical simulation of the circular TLM structures were performed to analyze the current distribution and its influence on the extraction procedure. A contact resistivity of 2/spl times/10/sup -5/ ohm-cm/sup 2/ was obtained without any high temperature anneal by using an N/sup +/ surface implant layer. This contact resistivity is an order of magnitude lower than any of the previously reported values for n-type 6H-silicon carbide.<>

Keywords

contact resistance; current distribution; ohmic contacts; semiconductor materials; semiconductor-metal boundaries; silicon compounds; simulation; titanium; N/sup +/ 6H-SiC substrates; N/sup +/ surface implant layer; SiC-Ti; Ti contact material; circular TLM structure; current distribution; extraction procedure; low contact resistivity contacts; ohmic contacts; two dimensional numerical simulation; Annealing; Implants; Ohmic contacts; Performance analysis; Semiconductor device doping; Semiconductor materials; Silicon carbide; Substrates; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347218

Filename

347218