DocumentCode
2312461
Title
200/spl deg/C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 /spl mu/m thick SOI
Author
Nakagawa, A. ; Yamaguchi, Y. ; Matsudai, Tomoko ; Yasuhara, N.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
687
Lastpage
690
Abstract
This paper experimentally verifies that high-voltage lateral IGBTs fabricated on SOI of less than 5 /spl mu/m exhibit high switching speed without the need for any special device design. This paper also verifies, for the first time, that thin SOI is a promising candidate for 200/spl deg/C high-temperature operation, because switching speed does not deteriorate at high temperature.<>
Keywords
electric breakdown of solids; insulated gate bipolar transistors; power integrated circuits; semiconductor switches; semiconductor-insulator boundaries; silicon; switching; 1.5 micron; 200 C; HV device; high-speed operation; high-temperature operation; high-voltage IGBT; lateral IGBTs; switching speed; thin SOI; Current density; Current measurement; Electric breakdown; Electrons; Impurities; Insulated gate bipolar transistors; Leakage current; Temperature; Thickness measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347219
Filename
347219
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